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2SJ520TP PDF预览

2SJ520TP

更新时间: 2024-01-10 20:21:56
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管
页数 文件大小 规格书
4页 47K
描述
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-251VAR

2SJ520TP 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:unknown
风险等级:5.84外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.062 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ520TP 数据手册

 浏览型号2SJ520TP的Datasheet PDF文件第1页浏览型号2SJ520TP的Datasheet PDF文件第2页浏览型号2SJ520TP的Datasheet PDF文件第3页 
2SJ520  
V
-- Qg  
A S O  
GS  
--10  
--9  
--100  
V
=--10V  
DS  
7
I
=--40A  
=--10A  
5
DP  
I
=--5A  
100µs  
D
3
2
--8  
I
--7  
DP  
--10  
7
--6  
--5  
--4  
--3  
--2  
5
3
2
Operation in this  
area is limited by R (on).  
--1.0  
7
5
DS  
3
2
--1  
0
Tc=25°C  
Single pulse  
--0.1  
--0.1  
0
5
10  
15  
20  
25  
30  
2
3
5
7
2
3
5
7
2
3
5
--1.0  
--10  
Total Gate Charge, Qg – nC  
Drain-to-Source Voltage, V  
– V  
DS  
IT00952  
IT00953  
P
-- Ta  
P
-- Tc  
D
D
1.2  
1.0  
0.8  
0.6  
0.4  
25  
20  
15  
10  
5
0
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta – ˚C  
Case Temperature, Tc – ˚C  
IT00954  
IT00955  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of March, 2000. Specifications and information herein are subject to  
change without notice.  
PS No.6435–4/4  

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