2SJ525
2
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV)
2SJ525
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
z High forward transfer admittance
: R
= 0.1 Ω (typ.)
DS (ON)
: |Y | = 4.5 S (typ.)
fs
z Low leakage current : I
= −100 μA (max) (V
= −30 V)
DSS
DS
z Enhancement mode : V = −0.8 to −2.0 V (V
= −10 V, I = −1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
−30
−30
±20
−5
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
V
GSS
DC (Note 1)
Pulse (Note 1)
I
A
D
Drain current
I
−20
1.3
A
DP
JEDEC
JEITA
―
―
Drain power dissipation
P
W
D
AS
AR
Single pulse avalanche energy
(Note 2)
E
517
mJ
TOSHIBA
2-8M1B
Avalanche current
I
−5
0.13
A
Weight: 0.54 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
96.1
Unit
Thermal resistance, channel to
ambient
R
°C / W
th (ch−a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = −25 V, T = 25°C (initial), L = 14.84 mH, R = 25 Ω, I = −5 A
V
DD
ch
G
D
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29