2SJ512
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
= ±16 V, V = 0 V
DS
—
—
—
—
±10
μA
μA
GSS
GS
DS
Drain cut−off current
I
= −250 V, V
= 0 V
−100
DSS
GS
Drain−source breakdown
voltage
V
I
= −10 mA, V
= 0 V
−250
—
—
V
(BR) DSS
D
GS
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
V
V
V
V
= −10 V, I = −1 mA
−1.5
—
—
1.0
3.7
800
80
−3.5
1.25
—
V
Ω
S
th
DS
GS
DS
D
R
= −10 V, I = −2.5 A
D
DS (ON)
|Y |
= −10 V, I = −2.5 A
1.8
—
fs
D
C
C
—
iss
V
= −10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
250
—
oss
Rise time
t
—
—
—
16
35
9
—
—
—
r
Turn−on time
Switching time
t
on
ns
Fall time
t
f
Turn−off time
t
—
—
70
22
—
—
off
Total gate charge (Gate−source
plus gate−drain)
Q
g
V
I
≈ −200 V, V
= −10 V,
GS
DD
= −5 A
nC
Gate−source charge
Q
—
—
14
8
—
—
D
gs
Gate−drain (“miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
—
Typ.
—
Max
−5
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
−20
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= −5 A, V
= −5 A, V
= 0 V
= 0 V
—
—
—
—
205
2.1
2.0
—
V
DSF
DR
DR
GS
GS
t
ns
μC
rr
dI
/ dt = 100 A / μs
DR
Q
—
rr
Marking
J512
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-16