Datasheet > 2SJ325-Z-E2

2SJ325-Z-E2

更新时间： 2024-01-10 04:10:57

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	1864K
描述
2SJ325-Z-E2

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技术参数
数据手册

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2SJ325-Z-E2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	MP-3Z	包装说明：	,
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.83	配置：	Single
最大漏极电流 (Abs) (ID)：	4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	20 W
子类别：	Other Transistors	表面贴装：	YES
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2SJ325-Z-E2 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ325,325-Z

SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWINGS (Unit: mm)

The 2SJ325 is P-channel MOS Field Effect Transistor designed for

solenoid, motor and lamp driver.

2.3 ±0.2

0.5 ±0.1

6.5 ±0.2

5.0 ±0.2

FEATURES

• Low On-state Resistance

R^DS(on)= 0.08 Ω TYP. (VGS = −10 V, ID = −2.0 A)

R^DS(on)= 0.15 Ω TYP. (VGS = −4 V, ID = −1.6 A)

• Low C^iss: Ciss = 800 pF TYP.

1.1 ±0.2

• Built-in G-S Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

0.5 ⁺−0⁰.^.1²

0.5 ⁺−⁰0^..²1

2.3 2.3

Drain to Source Voltage

VDSS

V^GSS(AC)

V^GSS(DC)

I^D(DC)

I^D(pulse)

PT1

−30

m20

Gate to Source Voltage (AC)

Gate to Source Voltage (DC)

Drain Current (DC)

−20, +10

m4.0

TO-251 (MP-3)

<R>

Drain Current (pulse) ^Note

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

m16

6.5 ±0.2

5.0 ±0.2

4.4 ±0.2

°C

2.3 ±0.2

PT2

1.0

0.5 ±0.1

Note

T^ch

150

Storage Temperature

T^stg

−55 to +150

2 3

Note PW ≤ 10 μs, Duty Cycle ≤ 1%

0.5 ±0.1

2.3 ±0.3

0.5 ±0.1

2.3 ±0.3

EQUIVALENT CIRCUIT

0.15 ±0.15

Electrode Connection

1. Gate

2. Drain

TO-252 (MP-3Z)

3. Source

4. Drain Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18328EJ3V0DS00 (3rd edition)

Date Published January 2007 NS CP(K)

Printed in Japan

1993, 2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

1 234 5 6 7 8

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