生命周期: | Obsolete | 包装说明: | IN-LINE, R-XSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 1.2 A |
最大漏源导通电阻: | 0.95 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ233 | SANYO | Very High-Speed Switching Applications |
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2SJ233AY | ONSEMI | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Met |
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2SJ233-AZ | ONSEMI | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Met |
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2SJ234(L) | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | TO-251VAR |
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2SJ234(S) | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | TO-252VAR |
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2SJ234(S)TL | HITACHI | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.7ohm, 1-Element, P-Channel, Silicon, Meta |
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