是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 120 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 140 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD669L-D-AA3-K | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669L-D-AA3-R | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669L-D-AA3-T | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669L-D-AB3-F-R | UTC |
获取价格 |
暂无描述 | |
2SD669L-D-AB3-K | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669L-D-AB3-R | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669L-D-AB3-T | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669L-D-T60-A-K | UTC |
获取价格 |
Transistor | |
2SD669L-D-T60-K | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669L-D-T60-R | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |