生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.57 | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 140 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD669-D-TN3-T | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669G-B-T9N-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2SD669G-B-TN3-T | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-252 | |
2SD669G-C-T92-R | UTC |
获取价格 |
Transistor | |
2SD669G-C-T9N-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2SD669G-C-TN3-R | UTC |
获取价格 |
暂无描述 | |
2SD669G-D-T9N-B | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2SD669G-D-TN3-T | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-252 | |
2SD669G-X-AA3B | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669G-X-AA3K | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |