2SD476A(K)B

更新时间： 2024-01-07 14:38:06

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日立 - HITACHI		/
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2SD476A(K)B 数据手册

2SD476(K), 2SD476A(K)

Electrical Characteristics (Ta = 25°C)

2SD476(K)

2SD476A(K)

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

—

I_C= 10 µA, I_E= 0

I_C= 50 mA, R_BE= ∞

I_E= 10 µA, I_C= 0

V_CB= 50 V, I_E= 0

Collector to emitter

breakdown voltage

Emitter to base

breakdown voltage

Collector cutoff current I_CBO

DC current transfer ratio h_FE1

—

µA

200

V_CE= 4 V, I_C= 1 A

(Pulse test)

h_FE2

—

V_CE= 4 V, I_C= 0.1 A

I_C= 2 A, I_B= 0.2 A

Collector to emitter

saturation voltage

V_CE(sat)

1.0

Base to emitter

saturation voltage

V_BE(sat)

—

1.2

—

1.2

Gain bandwidth product f_T

—

MHz V_CE= 4 V, I_C= 0.5 A

Turn on time

Turn off time

Storage time

t_on

0.3

3.0

2.5

0.3

3.0

2.5

µs

V_CC= 10.5 V

I_C= 10 I_B1= –10 I_B2

0.5 A

t_off

t_stg

Note: 1. The 2SD476(K) and 2SD476A(K) are grouped by h_FE1as follows.

60 to 120

100 to 200

Maximum Collector Dissipation Curve

Area of Safe Operation

(10 V, 4 A)

I_{C max}

_C= 40 W

1.0

0.5

Operation

(20 V, 2 A)

T_C= 25°C

(50 V, 0.22 A)

2SD476 K

0.2

0.1

2SD476A K

(60 V, 0.15 A)

100

150

50 100

Case temperature T_C(°C)

Collector to emitter voltage V_CE(V)

123 4 5

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与2SD476A(K)B相关器件

型号	品牌	描述	获取价格	数据表
2SD476A(K)C	RENESAS	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	获取价格
2SD476AK	RENESAS	Silicon NPN Triple Diffused	获取价格
2SD476AK	HITACHI	Silicon NPN Triple Diffused	获取价格
2SD476AKB	RENESAS	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB	获取价格
2SD476AKB	HITACHI	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB	获取价格
2SD476AKC	RENESAS	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB	获取价格