Datasheet > 2SC5000_04

2SC5000_04

更新时间： 2022-09-18 01:09:38

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
3页	112K
描述
Power Amplifier Applications

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数据手册

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2SC5000_04 数据手册

2SC5000

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5000

Power Amplifier Applications

Unit: mm

•

Low collector saturation voltage: V = 0.4 V (max) (I = 5 A)

CE (sat) C

Maximum Ratings

(Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

Base current

Collector power dissipation

Junction temperature

Storage temperature range

°C

150

stg

−55 to 150

JEDEC

JEITA

―

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

= 70 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

―

µA

CBO

= 7 V, I = 0

EBO

Collector-emitter breakdown voltage

DC current gain

= 10 mA, I = 0

120

―

(BR) CEO

= 1 V, I = 1 A

―

400

0.4

1.4

―

FE (1)

Collector-emitter

Saturation voltage

= 5 A, I = 0.25 A

0.19

0.96

CE (sat)

Base-emitter

= 5 A, I = 0.25 A

―

BE (sat)

Transition frequency

= 1 V, I = 1 A

―

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

―

Marking

C5000

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2004-07-26

12 3

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