Datasheet > 2SC4278_15

2SC4278_15

更新时间： 2022-02-26 13:19:08

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
1页	127K
描述
Silicon NPN Transistors

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数据手册

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2SC4278_15 数据手册

Power Transistors

www.jmnic.com

2SC4278

Silicon NPN Transistors

ꢀFeatures

With TO-247 package

Complement to type 2SA1633

ꢀAbsolute Maximum Ratings Tc=25

SYMBOL

V_CBO

V_CEO

V_CER

V_EB

PARAMETER

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Base Current

RATING

150

UNIT

150

I_B

I_C

Collector current-Continuous

P_D

100

Total Power Dissipation@TC=25

Derate above 25

T_j

Junction temperature

150

T_stg

Storage temperature

-65~150

TO-247

ꢀElectrical Characteristics Tc=25

ꢀ

SYMBOL

PARAMETER

CONDITIONS

MIN

150

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C=30mA; I_B=0

V_CBO

I_CEO

I_CBO

Collector-Base Voltage

Collector Cutoff Current

I_C=1mA; I^E=0

V_CE=150V; I_B=0

V_CB=150V; I_E=0

500

100

I_EBO

V_EBO

Emitter Cutoff Current

I_E=5mA; I^C=0

V_CE(sat-1)

Collector-emitter saturation voltages

I_C=5A; I_B=0.5A

2.0

V_CE(sat-2)

V_CE(sat-3)

V_CE(sat-4)

Collector-emitter saturation voltages

h_FE-1

h_FE-2

V_BE(sat)

f_T

Forward current transfer ratio

Base-emitter Saturation voltages

Current Gain-Bandwidth Product

I_C=1A; V_CE=5V

320

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与2SC4278_15相关器件

型号	品牌	描述	获取价格	数据表
2SC4278_2015	JMNIC	Silicon NPN Transistors	获取价格
2SC4278D	ROHM	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plasti	获取价格
2SC4278E	ROHM	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plasti	获取价格
2SC4278F	ROHM	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plasti	获取价格
2SC4278F31	ROHM	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plasti	获取价格
2SC4278F31/D	ROHM	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plasti	获取价格