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2SC4203(2-7B1A) PDF预览

2SC4203(2-7B1A)

更新时间: 2024-09-30 14:39:23
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 248K
描述
TRANSISTOR 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

2SC4203(2-7B1A) 技术参数

生命周期:Active包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.78外壳连接:COLLECTOR
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):400 MHzBase Number Matches:1

2SC4203(2-7B1A) 数据手册

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2SC4203  
TOSHIBA Transistor Silicon Epitaxial Planar Type  
2SC4203  
Video Output for High Definition VDT  
High Speed Switching Applications  
Unit: mm  
High transition frequency: f = 400 MHz (typ.)  
T
(V  
CE  
= 10 V, I = 70 mA)  
C
Low output capacitance: C < 5 pF (max) (V = 30 V)  
ob CB  
High voltage: V  
= 150 V  
CEO  
High power dissipation: P = 10 W  
C
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current  
V
V
V
180  
150  
V
V
V
A
A
A
CBO  
CEO  
EBO  
5
I
0.3  
C
I
0.5  
CP  
JEDEC  
JEITA  
I
0.2  
B
Ta = 25°C  
Power dissipation  
1.0  
P
W
C
Tc = 25°C  
10  
TOSHIBA  
2-7B1A  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.36 g (typ.)  
Storage temperature range  
T
55 to 150  
stg  
JEDEC  
JEITA  
TOSHIBA  
2-7B2A  
Weight: 0.36 g (typ.)  
1
2002-07-23  

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