Datasheet > 2SC4180W

2SC4180W

更新时间： 2024-09-27 04:26:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
3页	133K
描述
3Silicon Epitaxial Planar Transistor

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2SC4180W 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SC4180W

FEATURES

Excellent h_FElinearity.

High voltage and current.

Power dissipation P_C=150mW.

Small package.

Lead-free

APPLICATIONS

SOT-323

Audio frequency general purpose amplifier.

ORDERING INFORMATION

Type No.

Marking

D15/D16/D17/D18

Package Code

SOT-323

2SC4180W

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

120

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

120

Collector Current -Continuous

Collector Dissipation

℃

P_C

150

Junction and Storage Temperature

T_j,T_stg

-55~150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTF040

Rev.A

www.galaxycn.com

12 3

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