Datasheet > 2SC4177W

2SC4177W

更新时间： 2024-09-23 04:26:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
4页	272K
描述
Silicon Epitaxial Planar Transistor

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2SC4177W 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SC4177W

FEATURES

Excellent h_FElinearity.

High voltage and current.

Complementary to 2SA1611.

Small package.

Lead-free

APPLICATIONS

SOT-323

Audio frequency general purpose amplifier.

ORDERING INFORMATION

Type No.

Marking

L4▪//L5▪/L6▪/L7▪

Package Code

SOT-323

2SC4177W

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

100

150

℃

P_C

Junction and Storage Temperature

T_j,T_stg

-55~150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTF039

Rev.A

www.galaxycn.com

12 3 4

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与2SC4177W相关器件

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2SC4178-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
2SC4178F12	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 20MA I(C) \| SC-70
2SC4178F12-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
2SC4178F12-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
2SC4178F12-T1-AT	RENESAS	获取价格	TRANSISTOR,BJT,NPN,20V V(BR)CEO,20MA I(C),TO-236VAR
2SC4178F12-T2	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
2SC4178F12-T2-A	RENESAS	获取价格	VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD, SC-70, 3 PIN