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2SC3392

更新时间: 2024-01-30 06:14:48
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 39K
描述
NPN Epitaxial Planar Silicon Transistors

2SC3392 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.58
最大集电极电流 (IC):0.5 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SC3392 数据手册

  
SMD Type  
Transistors  
NPN Epitaxial Planar Silicon Transistors  
2SC3392  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Adoption of FBET process.  
High breakdown voltage : VCEO=50V.  
Large current capacitiy and high fT.  
Ultrasmall-sized package permitting sets  
to be smallsized, slim.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
50  
V
5
V
500  
mA  
mA  
mW  
Collector current (pulse)  
Collector dissipation  
ICP  
800  
PC  
200  
Jumction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
IcBO  
IEBO  
hFE  
Testconditons  
Min  
100  
Typ  
Max  
0.1  
Unit  
ìA  
Collector cutoff current  
VCB = 40V , IE = 0  
Emitter cutoff current  
VEB = 4V , IC = 0  
0.1  
ìA  
DC current Gain  
VCE = 5V , IC = 10mA  
VCE = 10V , IC = 50mA  
VCB = 10V , f = 1MHz  
560  
Gain bandwidth product  
Common base output capacitance  
Collector-to-emitter saturation voltage  
Base-to-emitter saturation voltage  
Collector-to-base breakdown voltage  
Collector-to-emitter breakdown voltage  
Emitter-to-base breakdown voltage  
Turn-on time  
fT  
300  
3.7  
0.1  
0.8  
MHz  
pF  
V
Cob  
VCE(sat) IC = 100mA , IB =10mA  
VBE(sat) IC = 100mA , IB =10mA  
V(BR)CBO IC = 10ìA , IE = 0  
0.3  
1.2  
V
60  
50  
5
V
V
IC = 100ìA , RBE =  
IE = 10ìA , IC = 0  
V(BR)CEO  
V
V(BR)EBO  
70  
400  
70  
ns  
ns  
ns  
ton  
tstg  
tf  
Storage time  
VCC = 20V, IC = 10IB1 = -10IB2 = 100mA  
Fall time  
hFE Classification  
AY  
Marking  
Rank  
hFE  
4
5
6
7
280 560  
100 200  
140 280  
200 400  
1
www.kexin.com.cn  

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