SMD Type
Transistors
NPN Transistors
2SC3392
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High breakdown voltage
● Large current capacitiy and high f
T
.
1
2
● High-Speed Switching Applications
● Complementary to 2SA1338
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
60
Unit
V
VCBO
VCEO
VEBO
50
5
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
500
800
200
150
mA
mW
℃
I
CP
P
C
T
J
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA, I
Ic= 1 mA,RBE= ∞
= 100μA, I = 0
CB= 40 V , I = 0
EB= 4V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.3
1.2
560
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=100 mA, I
B
B
=10mA
=10mA
0.1
0.8
V
C
=100 mA, I
h
FE
on
stg
V
CE= 5V, I
C= 10mA
90
Turn-ON Time
t
70
400
70
V
CC=20V,IC=10IB1=10IB2=100mA
ns
Storage Time
t
Fall Time
tf
Collector output capacitance
Transition frequency
C
ob
T
V
CB= 10V, f=1MHz
CE= 10V, I = 50mA
3.7
300
pF
f
V
C
MHz
■ Classification of hfe
Type
Range
Marking
2SC3392-AY4
100-200
AY4
2SC3392-AY5
140-280
AY5
2SC3392-AY6
200-400
AY6
2SC3392-AY7
280-560
AY7
1
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