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2SC3138

更新时间: 2024-11-27 06:22:23
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 38K
描述
Silicon NPN Triple Diffused Type

2SC3138 数据手册

  
SMD Type  
Transistors  
Silicon NPN Triple Diffused Type  
2SC3138  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High voltage. VCBO = 200 V (max)  
VCEO = 200 V (max)  
Small flat package.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
200  
V
V
200  
5
50  
V
mA  
mA  
mW  
Base current  
IB  
20  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
125  
Tstg  
-55 to +125  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
0.1  
Unit  
ìA  
ìA  
V
Collector cut-off current  
Emitter cut-off current  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
DC current gain  
VCB = 200 V, IE = 0  
VEB = 5 V, IC = 0  
IEBO  
0.1  
V(BR)CBO IC = 0.1 mA, IE = 0  
V(BR)CEO IC = 1 mA, IB = 0  
200  
200  
70  
V
hFE  
VCE = 3 V, IC = 10 mA  
240  
0.5  
1.5  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE (sat) IC = 10 mA, IB = 1 mA  
VBE (sat) IC = 10 mA, IB = 1 mA  
0.1  
0.75  
100  
2
V
V
fT  
Cob  
ton  
tstg  
tf  
VCE = 10 V, IC = 2 mA  
VCB = 10 V, IE = 0, f = 1 MHz  
pulse width = 5ìs,duty cycle  
IB1=-IB2=0.6 mA  
50  
MHz  
pF  
ìs  
Collector output capacitance  
Turn-on time  
4
0.3  
2
2
Storage time  
ìs  
Fall time  
VCC=50V,IC=6mA  
0.4  
ìs  
hFE Classification  
Marking  
Rank  
NO  
O
NY  
Y
hFE  
70 140  
120 240  
1
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