Datasheet > 2SC3138_03

2SC3138_03

更新时间： 2022-09-17 14:53:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	112K
描述
High Voltage Switching Applications

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数据手册

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2SC3138_03 数据手册

2SC3138

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

2SC3138

High Voltage Switching Applications

Unit: mm

High voltage: V

= 200 V (max)

CBO

CEO

Small flat package

Complementary to 2SA1255

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

200

CBO

CEO

EBO

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

125

-55~125

JEDEC

JEITA

TO-236MOD

stg

SC-59

Marking

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

2003-03-27

12 3 4 5

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2SC3138Y	ETC	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 50MA I(C) \| SC-59	获取价格