5秒后页面跳转
2SC3138-O PDF预览

2SC3138-O

更新时间: 2024-11-27 20:01:07
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 255K
描述
TRANSISTOR 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

2SC3138-O 技术参数

生命周期:Lifetime Buy零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.5
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):70
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SC3138-O 数据手册

 浏览型号2SC3138-O的Datasheet PDF文件第2页浏览型号2SC3138-O的Datasheet PDF文件第3页浏览型号2SC3138-O的Datasheet PDF文件第4页浏览型号2SC3138-O的Datasheet PDF文件第5页 
2SC3138  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)  
2SC3138  
High Voltage Amplifier Applications  
Unit: mm  
High Voltage Switching Applications  
High voltage: V  
V
= 200 V (max)  
= 200 V (max)  
CBO  
CEO  
Small flat package  
Complementary to 2SA1255  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
200  
200  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
20  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
JEDEC  
JEITA  
TO-236MOD  
C
T
j
125  
SC-59  
T
stg  
55 to 125  
TOSHIBA  
2-3F1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.012 g (typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1982-10  
1
2014-03-01  

与2SC3138-O相关器件

型号 品牌 获取价格 描述 数据表
2SC3138-O(TE85L) TOSHIBA

获取价格

2SC3138-O(TE85L)
2SC3138OTE85L TOSHIBA

获取价格

TRANSISTOR 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3138OTE85R TOSHIBA

获取价格

TRANSISTOR 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3138Y ETC

获取价格

TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 50MA I(C) | SC-59
2SC3138-Y TOSHIBA

获取价格

TRANSISTOR 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59,
2SC3138-Y(TE85L) TOSHIBA

获取价格

2SC3138-Y(TE85L)
2SC3138-Y(TE85L,F) TOSHIBA

获取价格

TRANSISTOR,BJT,NPN,200V V(BR)CEO,50MA I(C),SC-59
2SC3138YTE85L TOSHIBA

获取价格

TRANSISTOR 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3138YTE85R TOSHIBA

获取价格

TRANSISTOR 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3139 ETC

获取价格

TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1A I(C) | STX-M3