5秒后页面跳转
2SC2925 PDF预览

2SC2925

更新时间: 2024-01-25 06:20:21
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 39K
描述
Silicon NPN epitaxial planer type(For low-frequency output amplification0

2SC2925 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.82最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SC2925 数据手册

 浏览型号2SC2925的Datasheet PDF文件第2页 
Transistor  
2SC2925  
Silicon NPN epitaxial planer type  
For low-frequency output amplification  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
High foward current transfer ratio hFE  
.
Low collector to emitter saturation voltage VCE(sat)  
.
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
60  
50  
0.45+00..12  
0.45+00..12  
V
1.27  
1.27  
15  
V
1.5  
A
1:Emitter  
1 2 3  
IC  
0.7  
A
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
750  
mW  
˚C  
˚C  
2.54±0.15  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
1
Unit  
µA  
µA  
V
VCB = 20V, IE = 0  
Collector cutoff current  
ICEO  
VCE = 20V, IB = 0  
10  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
60  
50  
IC = 1mA, IB = 0  
V
IE = 10µA, IC = 0  
15  
V
*
Forward current transfer ratio  
hFE  
VCE = 10V, IC = 150mA  
IC = 500mA, IB = 50mA  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
400  
1000  
0.15  
200  
11  
2000  
0.4  
Collector to emitter saturation voltage VCE(sat)  
V
MHz  
pF  
Transition frequency  
fT  
Collector output capacitance  
Cob  
15  
*hFE Rank classification  
Rank  
hFE  
R
S
T
400 ~ 800 600 ~ 1200 1000 ~ 2000  
1

与2SC2925相关器件

型号 品牌 描述 获取价格 数据表
2SC2925R ETC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-226AA

获取价格

2SC2925S ETC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-226AA

获取价格

2SC2925T ETC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-226AA

获取价格

2SC2926 ETC

获取价格

2SC2926/N ROHM RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili

获取价格

2SC2926/NQ ROHM RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili

获取价格