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2SC1623

更新时间: 2024-01-02 07:32:07
品牌 Logo 应用领域
DCCOM 晶体晶体管光电二极管放大器局域网
页数 文件大小 规格书
1页 239K
描述
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

2SC1623 技术参数

极性:NPNCollector-emitter breakdown voltage:50
Collector Current - Continuous:0.1DC current gain - Min:90
DC current gain - Max:600Transition frequency:250
Package:SOT-323Storage Temperature Range:-55-150
class:Transistors

2SC1623 数据手册

  
DC COMPONENTS CO., LTD.  
2SC1623  
DISCRETE SEMICONDUCTORS  
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
Designed for audio frequency amplifier applications.  
SOT-23  
.020(0.50)  
.012(0.30)  
Pinning  
1 = Base  
2 = Emitter  
3 = Collector  
3
.108(0.65)  
.089(0.25)  
.063(1.60)  
.055(1.40)  
1
2
Absolute Maximum Ratings(TA=25oC)  
.045(1.15)  
.034(0.85)  
.091(2.30)  
.067(1.70)  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
50  
.118(3.00)  
.110(2.80)  
V
.0043(0.11)  
.0035(0.09)  
5
V
.051(1.30)  
.035(0.90)  
100  
mA  
mW  
oC  
oC  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PD  
200  
.026(0.65)  
.010(0.25)  
.004  
(0.10)  
.027(0.67)  
.013(0.32)  
Max  
TJ  
+150  
-55 to +150  
Dimensions in inches and (millimeters)  
TSTG  
Electrical Characteristics  
(Ratings at 25oC ambient temperature unless otherwise specified)  
Characteristic  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
Typ  
Max  
-
Unit  
V
Test Conditions  
IC=100µA, IE=0  
Collector-Base Breakdown Volatge  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Volatge  
Collector Cutoff Current  
60  
-
50  
-
-
V
IC=1mA, IB=0  
5
-
-
V
IE=100µA, IC=0  
VCB=60V, IE=0  
-
-
0.1  
0.1  
0.3  
1
µA  
µA  
V
Emitter Cutoff Current  
IEBO  
-
-
-
VEB=5V, IC=0  
Collector-Emitter Saturation Voltage(1) VCE(sat)  
-
IC=100mA, IB=10mA  
IC=100mA, IB=10mA  
IC=1mA, VCE=6V  
IC=1mA, VCE=6V  
IC=10mA, VCE=6V  
Base-Emitter Saturation Voltage(1)  
Base-Emitter On Voltage(1)  
DC Current Gain(1)  
VBE(sat)  
VBE(on)  
hFE  
-
-
V
0.55  
90  
250  
-
-
200  
-
0.65  
V
600  
-
Transition Frequency  
fT  
-
-
MHz  
pF  
Output Capacitance  
Cob  
3
VCB=6V, f=1MHz, IE=0  
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%  
Classification of hFE  
Go to"ALPHANUMERICINDEX"ofRectifiers!!fiers!!ENCETABLE"ofTransistors!!  
Range  
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