2SC1623-L5

更新时间： 2023-11-02 19:30:27

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	111K
描述
Tape: 3K/Reel , 120K/Ctn;

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数据手册

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2SC1623-L5 数据手册

M C C

2SC1623-L6

2SC1623-L7

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

High DC Current Gain: h_FE=600 Max.(V_CE=6.0V, I =1.0mA)

NPN Silicon

Epitaxial Transistors

High voltage: V_CEO=50V

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

5.0

100

200

-55 to +150

Unit

SOT-23

^OC

P_C

Collector power dissipation

Junction Temperature

Storage Temperature

T_J

T_STG

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

I_CBO

Collector Cutoff Current

(V_CB=60Vdc,I_E=0)

Emitter Cutoff Current

(V_EB=5.0Vdc, I_C=0)

---

0.1

uAdc

DIMENSIONS

I_EBO

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

ON CHARACTERISTICS

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

h_F

DC Current Gain*

---

(I =1.0mAdc, V_CE=6.0Vdc)

200

---

0.15

0.86

600

V_CE(sat)

V_BE(SAT)

V_BE

Collector Saturation Voltage*

(I =100mAdc, I =10mAdc)

0.3

1.0

0.65

---

Vdc

Base Saturation Voltage*

(I =100mAdc,I =10mAdc)

---

.085

.37

Base Emitter Voltage*

(V_CE=6.0Vdc, I =1.0mAdc)

0.55 0.62

Suggested Solder

Pad Layout

Collector Capacitance

(V_CB=6.0Vdc, I_E=0, f=1.0MHz)

Gain Bandwidth product

(V_CE=6.0Vdc, I_E=10mAdc)

C_ob

f_T

---

3.0

250

.031

.800

---

MHz

.035

.900

.079

2.000

inches

hFE CLASSIFICATION

Marking

h_FE

200-400

400-600

.037

.950

* Pulse Test PW<350us, duty cycle<2%

.037

.950

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Revision: 5

2007/06/04

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