Datasheet > 2SC1623

2SC1623

更新时间： 2024-02-08 06:02:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
4页	146K
描述
NPN Silicon Transistor

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中文翻译

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技术参数
数据手册

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2SC1623 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	50
Collector Current - Continuous：	0.1	DC current gain - Min：	90
DC current gain - Max：	600	Transition frequency：	250
Package：	SOT-323	Storage Temperature Range：	-55-150
class：	Transistors

2SC1623 数据手册

SMD Type

Transistors

NPN Silicon Transistor

2SC1623

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High DC Current Gain:

h^FE= 200 TYP.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

V^CE= 6.0 V, IC = 1.0 mA

High Voltage:

V^{CE O}= 50 V

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

100

Collector power dissipation

Junction temperature

P^C

200

T^j

150

Storage temperature range

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCB = 60V, IE=0

Min

Typ

Max

0.1

600

0.3

Unit

Collector cutoff current

Emitter cutoff current

ICBO

IEBO

hFE

VEB = 5V, IC=0

DC current gain *

VCE = 6V , IC = 1mA

200

0.15

0.86

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

VCE(sat) IC = 100mA , IB = 10mA

VBE(sat) IC = 100mA , IB = 10mA

VBE

Cob

VCE = 6V , IC = 1mA

0.55 0.62 0.65

Output capacitance

VCB = 6V , IE = 0 , f = 1.0MHz

VCE = 6V , IE = -10mA

3.0

MHz

Transiton Frequency

250

*. PW 350ìs,duty cycle 2%

hFE Classification

Marking

hFE

200 to 400

90 to 180

135 to 270

300 to 600

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