Datasheet > 2SB1375_2014

2SB1375_2014

更新时间： 2024-01-09 14:32:28

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	200K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1375_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1375

DESCRIPTION

·With TO-220F package

·Complement to type 2SD2012

·Low collector saturation voltage:

_CE(SAT)=-1.5V(Max) at I_C=-2A,I_B=-0.2A

·Collector power dissipation:

P_C=25W(T_C=25℃)

APPLICATIONS

·Audio frequency power amplifier

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-60

Open collector

-7

-3

I_B

Base current

-0.5

2.0

T_a=25℃

T_C=25℃

P_C

Collector dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

中文翻译

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