Datasheet > 2SB1382_07

2SB1382_07

更新时间： 2024-11-07 07:30:03

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	31K
描述
Silicon PNP Epitaxial Planar Transistor

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中文翻译

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数据手册

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2SB1382_07 数据手册

(2kΩ) (80Ω)

Darlington 2 S B1 3 8 2

Equivalent circuit

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082)

Application : Chopper Regulator, DC Motor Driver and General Purpose

External Dimensions FM100(TO3PF)

■Absolute maximum ratings

■Electrical Characteristics

(Ta=25°C)

Symbol

Ratings

Symbol

I^CBO

Conditions

V^CB=–120V

Ratings

–10max

–120min

2000min

–1.5max

–2.5max

50typ

Unit

µA

Unit

±0.2

5.5

±0.2

15.6

±0.2

3.45

V^CBO

VCEO

VEBO

–120

IEBO

V^EB=–6V

–6

V(BR)CEO

hFE

I^C=–10mA

±0.2

ø3.3

V^CE=–4V, IC=–8A

I^C=–8A, IB=–16mA

V^CE=–12V, IE=1A

V^CB=–10V, f=1MHz

–16(Pulse–26)

–1

VCE(sat)

VBE(sat)

75(Tc=25°C)

150

°C

1.75

2.15

0.8

MHz

Tstg

COB

350typ

–55 to +150

+0.2

-0.1

1.05

+0.2

±0.1

0.65

-0.1

5.45

1.5

3.35

■Typical Switching Characteristics (Common Emitter)

1.5

4.4

Weight : Approx 6.5g

a. Part No.

V^CC

(V)

R^L

(Ω)

I^C

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

I^B2

(mA)

ton

(µs)

tstg

(µs)

b. Lot No.

–40

–8

–10

–16

0.8typ

1.8typ

1.0typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=–4V)

–26

–20

–3

–16

–12

–8

–4

–2

IC=–16A

–8A

–10

–4A

–1

–0.5

–1

–2

–3

–4

–5

–6

–1

–10

–100

–1

–2

–2.4

Collector-Emitter Voltage VCE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

^j-at Characteristics

(VCE=–4V)

20000

10000

5000

10000

5000

Typ

0.5

1000

500

1000

500

0.2

100

1000

–0.3 –0.5

–1

–5

–10

–16

–0.3 –0.5

–1

–5

–10

–16

Time t(ms)

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

100

–50

Typ

–10

–5

–1

–0.5

Without Heatsink

Natural Cooling

–0.1

Without Heatsink

–0.05

–0.03

3.5

–3

–5

–10

–50

–100 –200

0.05 0.1

0.5

10 16

100

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

中文翻译

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与2SB1382_07相关器件

型号	品牌	获取价格	描述	数据表
2SB1383	ISC	获取价格	isc Silicon PNP Darlington Power Transistor
2SB1383	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Pur
2SB1383	NJSEMI	获取价格	Trans Darlington PNP 120V 25A 3-Pin(3+Tab) TO-3P
2SB1383_07	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor
2SB1386	TYSEMI	获取价格	Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
2SB1386	WILLAS	获取价格	SOT-89 Plastic-Encapsulate Transistors
2SB1386	HTSEMI	获取价格	TRANSISTOR(PNP)
2SB1386	KEXIN	获取价格	Low Frequency Transistor
2SB1386	SECOS	获取价格	PNP Silicon Low Frequency Transistor
2SB1386	UTC	获取价格	LOW FREQUENCY PNP TRANSISTOR

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