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2SAR514P HZG
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Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
-80
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
-80
V
-6
V
-0.7
A
Collector current
Power dissipation
*1
ICP
-1.4
A
*2
PD
0.5
W
W
℃
℃
*3
PD
2.0
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
I = -100μA
Unit
Min.
-80
Typ.
Max.
-
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
BVCBO
BVCEO
-
V
V
C
I = -1mA
C
-80
-
-
BVEBO
ICBO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I = -100μA
-6
-
-
V
μA
μA
mV
-
E
V
CB
V
EB
= -80V
= -4V
-
-
-1.0
-1.0
-400
390
IEBO
-
-
-
-200
-
Collector-emitter saturation voltage
DC current gain
V
I = -300mA, I = -15mA
C
CE(sat)
B
hFE
V
CE
= -3V, I = -100mA
120
C
V
= -10V, I = 200mA,
E
CE
f
Transition frequency
Output capacitance
Turn-On time
-
-
-
-
-
380
10
-
-
-
-
-
MHz
pF
ns
T
f = 100MHz
V
CB
= -10V, I = 0A,
E
Cob
ton
tstg
tf
f = 1MHz
I = -350mA,
C
50
I
I
= -35mA,
= 35mA,
⋍ -10V,
B1
B2
Storage time
350
50
ns
V
CC
R = 27Ω
See test circuit
L
Fall time
ns
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*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
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20181011 - Rev.001