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2SAR514PHZG PDF预览

2SAR514PHZG

更新时间: 2023-09-03 20:32:07
品牌 Logo 应用领域
罗姆 - ROHM 晶体管
页数 文件大小 规格书
9页 1527K
描述
2SAR514PHZG是低VCE(sat)的低频放大用晶体管。

2SAR514PHZG 数据手册

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2SAR514P HZG  
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Datasheet  
llAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Values  
-80  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
-80  
V
-6  
V
-0.7  
A
Collector current  
Power dissipation  
*1  
ICP  
-1.4  
A
*2  
PD  
0.5  
W
W
*3  
PD  
2.0  
Tj  
Junction temperature  
150  
Tstg  
Range of storage temperature  
-55 to +150  
llElectrical characteristics (Ta = 25°C)  
Values  
Parameter  
Symbol  
Conditions  
I = -100μA  
Unit  
Min.  
-80  
Typ.  
Max.  
-
Collector-base breakdown  
voltage  
Collector-emitter breakdown  
voltage  
BVCBO  
BVCEO  
-
V
V
C
I = -1mA  
C
-80  
-
-
BVEBO  
ICBO  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
I = -100μA  
-6  
-
-
V
μA  
μA  
mV  
-
E
V
CB  
V
EB  
= -80V  
= -4V  
-
-
-1.0  
-1.0  
-400  
390  
IEBO  
-
-
-
-200  
-
Collector-emitter saturation voltage  
DC current gain  
V
I = -300mA, I = -15mA  
C
CE(sat)  
B
hFE  
V
CE  
= -3V, I = -100mA  
120  
C
V
= -10V, I = 200mA,  
E
CE  
f
Transition frequency  
Output capacitance  
Turn-On time  
-
-
-
-
-
380  
10  
-
-
-
-
-
MHz  
pF  
ns  
T
f = 100MHz  
V
CB  
= -10V, I = 0A,  
E
Cob  
ton  
tstg  
tf  
f = 1MHz  
I = -350mA,  
C
50  
I
I
= -35mA,  
= 35mA,  
-10V,  
B1  
B2  
Storage time  
350  
50  
ns  
V
CC  
R = 27Ω  
See test circuit  
L
Fall time  
ns  
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*1 Pw=10ms, Single Pulse  
*2 Each terminal mounted on a reference land.  
*3 Mounted on a ceramic board.(40×40×0.7mm)  
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www.rohm.com  
© 2019 ROHMCo., Ltd. All rights reserved.  
2/6  
20181011 - Rev.001  

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