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2SAR523UB PDF预览

2SAR523UB

更新时间: 2024-01-24 06:02:58
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 166K
描述
General purpose transistor(-50V,-0.1A)

2SAR523UB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-85
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:13 weeks风险等级:1.72
Samacsys Description:PNP General Purpose Amplification Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F3
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SAR523UB 数据手册

 浏览型号2SAR523UB的Datasheet PDF文件第2页浏览型号2SAR523UB的Datasheet PDF文件第3页 
General purpose transistor(-50V,-0.1A)  
2SAR523M/2SAR523EB/2SAR523UB  
Structure  
Dimensions (Unit : mm)  
PNP silicon epitaxial planar transistor  
VMT3  
Features  
Complemets the 2SCR523M/2SCR523EB/2SCR523UB.  
Abbreviated symbol : PB  
Applications  
Switch, LED driver  
EMT3F  
(3)  
Packaging specifications  
(1)  
(2)  
Package  
VMT3  
Taping  
T2L  
EMT3F  
Taping  
TL  
UMT3F  
Taping  
TL  
Abbreviated symbol : PB  
Packaging Type  
Code  
Type  
UMT3F  
2.0  
0.9  
0.32  
Basic ordering  
unit (pieces)  
(3)  
8000  
3000  
3000  
2SAR523M  
2SAR523EB  
2SAR523UB  
(1)  
(2)  
0.13  
0.65 0.65  
1.3  
Abbreviated symbol : PB  
Absolute maximum ratings (Ta=25C)  
inner circuit  
Limits  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Unit  
(3)  
Parameter  
50  
50  
5  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
(1)  
V
(1) Base  
(2) Emitter  
(3) Collector  
100  
200  
150  
200  
mA  
mA  
mW  
mW  
°C  
(2)  
Collector current  
1  
ICP  
2SAR523M,2SAR523EB  
Power  
2  
PD  
dissipation  
2SAR523UB  
Tj  
150  
Junction temperature  
55 to +150  
°C  
Tstg  
Storage temperature  
1 Pw=1mS Single pulse  
2 Each terminal mounted on a recommended land  
Electrical characteristics (Ta=25C)  
Parameter  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Symbol  
BVCEO  
BVCBO  
BVEBO  
Min.  
Typ. Max.  
Unit  
V
Conditions  
50  
50  
I
I
I
C
=
=
1mA  
50μA  
50μA  
50V  
5V  
50mA, I  
C
V
5
V
E
= −  
I
CBO  
EBO  
CE(sat)  
FE  
120  
0.1  
0.1  
μA  
μA  
V
V
CB  
= −  
=
=
=
=
Emitter cut-off current  
I
V
EB  
Collector-emitter saturation voltage  
DC current gain  
V
560  
0.40  
I
C
=
B
=
5mA  
0.15  
h
MHz  
pF  
V
V
V
CE  
CE  
CB  
6V, I  
C=  
1mA  
Transition frequency  
f
T
300  
2
10V, I  
10V, I  
E
=10mA, f=100MHz  
=0A, f=1MHz  
Output capacitance  
Cob  
E
www.rohm.com  
2010.09 - Rev.A  
1/2  
c
2009 ROHM Co., Ltd. All rights reserved.  

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