Datasheet > 2SA1869_06

2SA1869_06

更新时间： 2022-09-16 17:09:56

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	115K
描述
Power Amplifier Applications

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数据手册

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2SA1869_06 数据手册

2SA1869

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1869

Power Amplifier Applications

Unit: mm

•

Good linearity of h

Complementary to 2SC4935

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−3

Base current

−0.3

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

150

°C

JEDEC

JEITA

―

stg

−55 to 150

SC-67

2-10R1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

Weight: 1.7 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4

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