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2SA1680_07 PDF预览

2SA1680_07

更新时间: 2024-01-24 13:11:18
品牌 Logo 应用领域
东芝 - TOSHIBA 开关放大器电源开关功率放大器
页数 文件大小 规格书
4页 127K
描述
Power Amplifier Applications Power Switching Applications

2SA1680_07 数据手册

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2SA1680  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA1680  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
Low collector-emitter saturation voltage: V  
= 0.5 V (max)  
CE (sat)  
(I = 1 A)  
C
High collector power dissipation: P = 900 mW (Ta = 25 °C)  
C
High-speed switching: t  
= 300 ns (typ.)  
stg  
Complementary to 2SC4408.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
6  
V
I
2  
A
C
Base current  
I
0.2  
900  
A
JEDEC  
JEITA  
TO-92MOD  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
mW  
°C  
°C  
C
T
150  
j
TOSHIBA  
2-5J1A  
T
stg  
55 to 150  
Weight: 0.36 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2007-06-07  

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