是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 150 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 160 |
JEDEC-95代码: | TO-247 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 100 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | NOT SPECIFIED |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20 MHz |
VCEsat-Max: | 1 V |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1633D | ETC | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-247AE |
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2SA1633E | ROHM | Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plasti |
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2SA1633F | ROHM | Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plasti |
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2SA1633F31 | ROHM | Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plasti |
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2SA1633F31/D | ROHM | Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plasti |
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2SA1633F31/DE | ROHM | Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plasti |
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