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2SA1462

更新时间: 2024-02-16 13:55:05
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 38K
描述
PNP Silicon Epitaxia Transistor

2SA1462 技术参数

生命周期:Obsolete包装说明:PLASTIC, SC-59, 3 PIN
Reach Compliance Code:unknown风险等级:5.73
最大集电极电流 (IC):0.05 A基于收集器的最大容量:3 pF
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):1800 MHz
最大关闭时间(toff):40 ns最大开启时间(吨):20 ns
VCEsat-Max:0.2 V

2SA1462 数据手册

  
SMD Type  
Transistors  
PNP Silicon Epitaxia Transistor  
2SA1462  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High speed,high voltage switching.  
High ft:fT=1800MHz TYP.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
Low Cob:Cob=2.0pF TYP.  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Collecto to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-15  
Unit  
V
-15  
V
-4.5  
V
-50  
mA  
mW  
PT  
200  
Total power dissipation TA=25  
Junction temperature  
Tj  
150  
Storage temperature  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICES  
IEBO  
Testconditons  
Min  
Typ  
Max  
-100  
-100  
150  
Unit  
nA  
VCE = -8.0V, RBE=0  
VEB = -3.0V, IC=0  
nA  
VCE = -1.0V , IC = -10mA  
VCE = -1.0V , IC = -1mA  
50  
30  
80  
70  
DC current gain *  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = -10mA , IB = -1.0mA  
VBE(sat) IC = -10mA , IB = -1.0mA  
-0.09 -0.20  
-0.98 -0.95  
V
V
fT  
Cob  
ton  
VCE = -10V , IE = 10mA  
800 1800  
2.0  
MHz  
pF  
ns  
VCB = -5.0V , IE = 0 , f = 1.0MHz  
3.0  
20  
40  
40  
Turnput Capacitance  
Storage Time  
9.0  
16  
19  
IC = -10mA , IB1 = IB1 = -1.0mA  
tstg  
toff  
ns  
Turn-off Time  
ns  
* Pulse test: tp  
350 ìs; Duty Cycle 2%  
hFE Classification  
Marking  
hFE  
Y33  
50 100  
Y34  
75 150  
1
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