Datasheet > 2SA1463

2SA1463

更新时间： 2024-09-17 06:24:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	52K
描述
PNP Silicon Epitaxia

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中文翻译

获取价格

数据手册

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2SA1463 数据手册

SMD Type

TransistIoCrs

PNP Silicon Epitaxia

2SA1463

Features

High speed,high voltage switching.

Low Collector Saturation Voltage

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collecto to emitter voltage

Emitter to base voltage

Collector current(DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-60

Unit

-45

-5.0

-1.0

Collector current(Pulse)*

Total power dissipation

Junction temperature

I^C

-2.0

P^T

T^j

150

Storage temperature

Tstg

-55 to +150

*.pw 10 ms,Duty Cycle 50%

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CES

Testconditons

Min

Typ

Max

-0.5

200

Unit

ìA

VCE = -45V, RBE=0

I^EBO

VEB = -4V, IC=0

ìA

h^FE1

h^FE2

VCE = -10V , IC = -50mA

VCE = -10V , IC = -500mA

DC current gain *

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Gain bandwidth product

Output capacitance

V^CE(sat)IC = -500mA , IB = -50mA

V^BE(sat)IC = -500mA , IB = -50mA

-0.26 -0.6

-0.98 -1.2

400

f^T

C^ob

t^on

VCE = -10V , IE = 100mA

300

MHz

VCB = -10V , IE = 0 , f = 1.0MHz

Turn-on time

I^C= -500mA , IB1 = IB1 = -50mA

Storage time

t^stg

t^off

Turn-off time

100

* Pulse test: tp

350 ìs; d

0.02.

hFE Classification

Marking

hFE

60 120

100 200

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