SMD Type
Transistors
PNP Transistors
2SA1463
■ Features
1.70 0.1
● High speed ,high voltage switching
● Low collector saturaton voltage
● Complementary to 2SC3736
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
VCEO
VEBO
-60
V
Collector - Emitter Voltage
Emitter - Base Voltage
-45
-5
Collector Current - Continuous
I
C
-1
A
Collector Current - Pulse
*
I
CP
-2
2
Collector Power Dissipation
Junction Temperature
P
C
W
℃
T
J
150
Storage Temperature range
Tstg
-55 to 150
* : Pulsed:PW ≤ 10ms,Duty Cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA, I =0
Ic= -1 mA, I =0
= -100μA, I
Min
-60
-45
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
=0
I
CBO
EBO
V
V
CB= -60 V , I
E
=0
-0.5
-0.5
uA
V
I
EB= -4V , IC=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
*
*
V
CE(sat)
BE(sat)
I
I
C
=-500 mA, I
B
B
=-50 mA
=-50 mA
-0.26 -0.6
-0.98 -1.2
200
V
C=-500 mA, I
hFE(1)
V
V
CE= -10V, I
CE=- 10V, I
C
= -50mA
60
60
DC current gain
*
h
FE(2)
C= -500mA
Turn-on time
Storage time
Turn -off time
t
on
stg
off
25
46
40
70
I
C
=-500mA,IB1=-IB2=-50mA
ns
t
t
62
100
25
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= -10V, I
CE= -10V, I
E
E
= 0,f=1MHz
= 100mA
11
pF
f
300
400
MHz
* : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
Type
Range
Marking
2SA1463-L
60-120
IL
2SA1463-K
100-200
IK
1
www.kexin.com.cn