2SA1171PDTL

更新时间： 2024-02-05 23:04:49

品牌	Logo	应用领域
日立 - HITACHI		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
5页	26K
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数据手册

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2SA1171PDTL 数据手册

2SA1171

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–90

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–90

–5

–50

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown V_(BR)CEO

voltage

–90

—

I_C= –1 mA, R_BE= ∞

Collector cutoff current

DC current transfer ratio

Base to emitter voltage

I_CBO

h_FE*¹

V_BE

—

–0.5

800

µA

V_CB= –75 V, I_E= 0

250

—

V_CE= –12 V, I_C= –2 mA

I_C= –10 mA, I_B= –1 mA

–0.75

–0.5

Collector to emitter saturation V_CE(sat)

voltage

—

Gain bandwidth product

f_T

—

200

1.6

—

MHz

V_CE= –12 V, I_C= –2 mA

Collector output capacitance

Cob

V_CB= –25 V, I_E= 0, f = 1 MHz

Note: 1. The 2SA1171 is grouped by h_FEas follows.

Grade

Mark

h_FE

250 to 500 400 to 800

See characteristic curves of 2SA872.

123 4 5

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