Datasheet > 2SA1175

2SA1175

更新时间： 2023-12-06 20:04:02

品牌	Logo	应用领域
先科 - SWST		放大器晶体管
页数	文件大小	规格书
1页	41K
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2SA1175 数据手册

2SA1175

PNP Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into six groups, R, J,

H, F, E and K according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

100

Base Current

-I_B

Power Dissipation

P_tot

250

150

Junction Temperature

Storage Temperature Range

T_j

- 55 to + 150

T_stg

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 6 V, -I_C= 2 mA

Current Gain Group

h_FE

110

135

170

200

250

300

180

220

270

320

400

600

Collector Base Cutoff Current

at -V_CB= 60 V

-I_CBO

-I_EBO

-V_CE(sat)

f_T

100

0.3

Emitter Base Cutoff Current

at -V_EB= 5 V

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 10 mA

Gain Bandwidth Product

at -V_CE= 6 V, -I_E= 1 mA

MHz

Output Capacitance

at -V_CB= 10 V, f = 1 MHz

C_ob

Dated：18/08/2016 Rev：02

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2SA1175HF	NEC	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,	获取价格