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2SA1083D PDF预览

2SA1083D

更新时间: 2024-01-16 08:12:04
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 42K
描述
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-92

2SA1083D 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.62最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):250JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

2SA1083D 数据手册

 浏览型号2SA1083D的Datasheet PDF文件第1页浏览型号2SA1083D的Datasheet PDF文件第2页浏览型号2SA1083D的Datasheet PDF文件第3页浏览型号2SA1083D的Datasheet PDF文件第5页浏览型号2SA1083D的Datasheet PDF文件第6页浏览型号2SA1083D的Datasheet PDF文件第7页 
2SA1083, 2SA1084, 2SA1085  
Typical Output Characteristics (1)  
Maximum Collector Dissipation Curve  
600  
–50  
–40  
–30  
–20  
–10  
400  
200  
IB = 0  
–12  
0
–4  
–8  
–16  
–20  
0
50  
100  
150  
Collector to Emitter Voltage VCE (V)  
Ambient Temperature Ta (°C)  
Typical Output Characteristics (2)  
Typicaol Transfer Characteristics  
–20  
–10  
–5  
VCE = –12 V  
–16  
–12  
–8  
–2  
–1.0  
–0.5  
–4  
–0.2  
–0.1  
IB = 0  
–8  
Collector to Emitter Voltage VCE (V)  
0
–4  
–12  
–16  
–20  
0
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
Base to Emitter Voltage VBE (V)  
4

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