M C C
R
Micro Commercial Components
2SA1083-D
2SA1083-E
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
•
•
•
•
·
Capable of 0.4Watts of Power Dissipation.
PNP Silicon
Plastic-Encapsulate
Transistor
Collector-current: -0.1A
Collector-base Voltage: -60V
Operating and storage junction temperature range: -55OC to +150OC
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
·
•
Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
TO-92
·
Halogen free available upon request by adding suffix "-HF"
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector-Emitter Breakdown Voltage
-60
-60
-5
---
---
Vdc
Vdc
B
(I =-1.0mAdc, IB=0)
C
Collector-Base Breakdown Voltage
(I =-10uAdc, IE=0)
C
Emitter-Base Breakdown Voltage
---
Vdc
(I =-10uAdc, IC=0)
E
I
Collector Cutoff Current
(VCB=-50Vdc, IE=0)
Emitter Cutoff Current
---
-0.1
-0.1
uAdc
uAdc
CBO
C
IEBO
---
(VEB=-2.0Vdc, IC=0)
ON CHARACTERISTICS
hFE
DC Current Gain
---
250
800
-0.2
(I =-2.0mAdc, VCE=-12.0Vdc)
C
VCE(sat)
VBE
Collector-Emitter Saturation Voltage
---
Vdc
Vdc
(I =-10mAdc, I =-1mAdc)
C
B
Base-Emitter Voltage
(I =-2.0mAdc, VCE=-12.0Vdc)
C
D
-0.6(TYP)
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
90(TYP)
E
(I =-2.0mAdc, VCE=-12.0Vdc)
MHz
C
E
C
C
B
B
Collector Output Capacitance
(VCB=-10Vdc, IE=0,f=1MHz)
COB
pF
3.5(TYP)
STRAIGHT LEAD BENT LEAD
BULK PACK AMMO PACK
G
DIMENSIONS
INCHES
MM
FE (1)
CLASSIFICATION OF H
DIM
A
B
MIN
.169
.169
.500
MAX
.185
.185
---
MIN
4.30
4.30
MAX
4.70
4.70
---
NOTE
Rank
Range
D
E
250-500
400-800
C
12.70
D
E
.015
.130
.095
.173
.022
.146
.105
.220
0.38
3.30
2.42
4.40
0.55
3.70
2.67
5.60
Straight Lead
Bent Lead
G
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
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Revision: A
2016/06/15