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2SA1069-K-AZ PDF预览

2SA1069-K-AZ

更新时间: 2024-02-10 07:23:22
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网开关晶体管
页数 文件大小 规格书
6页 136K
描述
5A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, MP-25, 3 PIN

2SA1069-K-AZ 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:MP-25, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.2外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SA1069-K-AZ 数据手册

 浏览型号2SA1069-K-AZ的Datasheet PDF文件第1页浏览型号2SA1069-K-AZ的Datasheet PDF文件第3页浏览型号2SA1069-K-AZ的Datasheet PDF文件第4页浏览型号2SA1069-K-AZ的Datasheet PDF文件第5页浏览型号2SA1069-K-AZ的Datasheet PDF文件第6页 
2SA1069, 1069A  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
Parameter  
Symbol  
VCEO(SUS)  
VCEX(SUS)1  
Conditions  
MIN.  
TYP.  
MAX.  
Unit  
V
IC = 3.0 V, IB1 = 0.3 A, L = 1 mH  
IC = 3.0 A, IB1 = IB2 = 0.3 A,  
60/80  
60/80  
Collector to emitter voltage  
Collector to emitter voltage  
V
VBE(OFF) = 5.0 V, L = 180 µH, clamped  
IC = 6.0 A, IB1 = 0.6 A, IB2 = 0.3 A,  
VBE(OFF) = 5.0 V, L = 180 µH, clamped  
60/80  
Collector to emitter voltage  
VCEX(SUS)2  
V
VCB = 60/80 V, IE = 0 A  
VCE = 60/80 V, RBE = 51 , TA = 125 °C  
VCE = 60/80 V, VBE(OFF) = 1.5 V  
VCE = 60/80 V, VBE(OFF) = 1.5 V,  
TA = 125 °C  
10  
1.0  
10  
µA  
mA  
µA  
Collector cutoff current  
Collector cutoff current  
Collector cutoff current  
Collector cutoff current  
ICBO  
ICER  
ICEX1  
ICEX2  
1.0  
mA  
VEB = 5.0 V, IC = 0 A  
10  
µA  
Emitter cutoff current  
DC current gain  
DC current gain  
Collector saturation voltage  
Base saturation voltage  
Turn-on time  
IEBO  
hFE1  
hFE2  
VCE(sat)  
VBE(sat)  
ton  
VCE = 5.0 V, IC = 0.3 ANote  
VCE = 5.0 V, IC = 0.3 ANote  
IC = 3.0 A, IB = 0.3 ANote  
IC = 3.0 A, IB = 0.3 ANote  
40  
40  
200  
0.6  
1.5  
0.5  
V
V
IC = 3.0 A, RL = 17 ,  
IB1 = IB2 = 0.3 A, VCC ≅ −50 V  
Refer to the test circuit.  
µs  
µs  
µs  
Storage time  
tstg  
2.5  
Fall time  
tf  
0.5  
Note Pulse test PW 350 µs, duty cycle 2%  
hFE CLASSIFICATION  
Marking  
hFE2  
M
L
K
40 to 80  
60 to 120  
100 to 200  
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT  
Base current  
waveform  
Collector current  
waveform  
2
Data Sheet D14855EJ3V0DS  

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