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2SA1069M PDF预览

2SA1069M

更新时间: 2024-02-05 20:56:17
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
6页 137K
描述
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220AB

2SA1069M 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.84
最大集电极电流 (IC):5 A配置:Single
最小直流电流增益 (hFE):40最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):30 W
子类别:Other Transistors表面贴装:NO

2SA1069M 数据手册

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DATA SHEET  
SILICON POWER TRANSISTORS  
2SA1069, 1069A  
PNP SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-SPEED SWITCHING  
PS9@SDIBꢀꢀDIAPSH6UDPI  
The 2SA1069/1069A are the mold power transistors developed for  
high-speed switching, and is ideal for use as a driver in devices such  
as switching regulators, DC/DC converters, and high-frequency power  
amplifiers.  
ꢀꢁꢂꢅꢔ4ꢉ'  
 ꢆ(ꢞꢚꢜ6  
 ꢆ(ꢞꢚꢜ6(  
ꢀꢁꢓ5ꢁꢑꢄ  
.ꢘ7  ꢚ(ꢗ  
A@6UVS@T  
(TO-220AB)  
• Low collector saturation voltage  
• Fast switching speed  
67TPGVU@ꢀꢀH6YDHVHꢀꢀS6UDIBTꢀꢀꢁU6ꢀꢀ2ꢀꢀ!$ 8ꢂ  
°
ꢀꢁꢂꢁꢃꢄꢅꢄꢂ  
ꢆꢇꢃꢈꢉꢊ  
ꢋꢗꢘ  
ꢋꢉꢌꢍꢎꢅꢎꢉꢌꢏ  
ꢐꢁꢅꢎꢌꢑꢏ  
ꢒꢌꢎꢅ  
ꢙꢚ  
ꢜꢚꢝ ꢙꢚ  
ꢋꢉꢊꢊꢄꢓꢅꢉꢂꢔꢅꢉꢔꢈꢁꢏꢄꢔꢕꢉꢊꢅꢁꢑꢄ  
ꢋꢉꢊꢊꢄꢓꢅꢉꢂꢔꢅꢉꢔꢄꢃꢎꢅꢅꢄꢂꢔꢕꢉꢊꢅꢁꢑꢄ  
ꢛꢃꢎꢅꢅꢄꢂꢔꢅꢉꢔꢈꢁꢏꢄꢔꢕꢉꢊꢅꢁꢑꢄ  
ꢋꢉꢊꢊꢄꢓꢅꢉꢂꢔꢓ!ꢂꢂꢄꢌꢅꢔ"#ꢋ$  
ꢋꢉꢊꢊꢄꢓꢅꢉꢂꢔꢓ!ꢂꢂꢄꢌꢅꢔ")!ꢊꢏꢄ$  
 
ꢋꢛꢘ  
ꢛꢗꢘ  
&'ꢚ  
ꢞꢚ  
%ꢋ"#ꢋ$  
(
ꢀ*ꢔ ꢔ+ꢚꢚꢔ ꢏ,  
µ
ꢍ!ꢅꢇꢔꢓꢇꢓꢊꢄꢔ ꢔꢞꢚ-  
%ꢋ")!ꢊꢏꢄ$  
(
 '&  
ꢗꢁꢏꢄꢔꢓ!ꢂꢂꢄꢌꢅꢔ"#ꢋ$  
%ꢗ"#ꢋ$  
.  
(
.ꢔ/ꢔ &   
°
.(ꢔ/ꢔ &   
°
.ꢉꢅꢁꢊꢔ)ꢉ0ꢄꢂꢔꢍꢎꢏꢏꢎ)ꢁꢅꢎꢉꢌ  
+ꢚ  
ꢞ'&  
ꢞ&ꢚ  
*
*
°
1!ꢌꢓꢅꢎꢉꢌꢔꢅꢄꢃ)ꢄꢂꢁꢅ!ꢂꢄ  
ꢆꢅꢉꢂꢁꢑꢄꢔꢅꢄꢃ)ꢄꢂꢁꢅ!ꢂꢄ  
.2  
&&ꢔꢅꢉꢔ3ꢞ&ꢚ  
°
.ꢏꢅꢑ  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14855EJ3V0DS00 (3rd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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