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2SA1012Y(TO-251) PDF预览

2SA1012Y(TO-251)

更新时间: 2024-02-12 06:53:38
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友顺 - UTC /
页数 文件大小 规格书
4页 129K
描述
Transistor

2SA1012Y(TO-251) 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
最大集电极电流 (IC):5 A最小直流电流增益 (hFE):120
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):25 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

2SA1012Y(TO-251) 数据手册

 浏览型号2SA1012Y(TO-251)的Datasheet PDF文件第1页浏览型号2SA1012Y(TO-251)的Datasheet PDF文件第2页浏览型号2SA1012Y(TO-251)的Datasheet PDF文件第3页 
UTC2SA1012  
SILICON PNP EPITAXIAL TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
4
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R213-012,A  

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