Datasheet > 2SA1012-X-TN3-T

2SA1012-X-TN3-T

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
友顺 - UTC		开关
页数	文件大小	规格书
4页	111K
描述
HIGH CURRENT SWITCHING APPLICATION

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数据手册

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2SA1012-X-TN3-T 数据手册

2SA1012

PNP SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

-60

Collector-Emitter Voltage

Peak Collector Current

Power Dissipation

-50

-5

P_D

℃

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

-60

-50

-5

TYP

MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BV_CBOI_C=-100µA, I_E=0

BV_CEOI_C=-10mA, I_B=0

BV_EBOI_E=-100µA, I_C=0

I_CBO

I_EBO

h_FE1

h_FE2

V_CB=-50V, I_E=0

V_EB=-5V, I_C=0

-1.0

240

µA

Emitter Cut-off Current

V_CE=-1V, I_C=-1A

V_CE=-1V, I_C=-3A

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition frequency

V_{CE (SAT)}I_C=-3A, I_B=-0.15A

V_{BE (SAT)}I_C=-3A, I_B=-0.15A

-0.2

-0.9

-0.4

-1.2

f_T

Cob

t_ON

t_S

V_CE=-4V, I_C=-1A

MHz

µs

Collector output capacitance

Turn-on time

V_CB=-10V, I_E=0, f=1MHz

170

0.1

1.0

Storage time

µs

Switching time

Fall time

t_F

0.1

µs

ꢀ

CLASSIFICATION of h_FE1

RANK

RANGE

70 ~ 140

120 ~ 240

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

www.unisonic.com.tw

QW-R203-015,E

123 4

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