Datasheet > 2SA1012Y(TO-220)

2SA1012Y(TO-220)

更新时间： 2024-02-21 18:03:20

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Transistor

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2SA1012Y(TO-220) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SA1012Y(TO-220) 数据手册

UTC2SA1012

SILICON PNP EPITAXIAL TRANSISTOR

SILICON PNP EPITAXIAL

TRANSISTOR

DESCRIPTION

The A1012 is designed for high current switching

application.

FEATURES

*Low collector saturation voltage

Vce(sat)=-0.4V(max.) at Ic=-3A

*High speed switching time

tstg=1.0µs(Typ.)

*Complementary to 2SC2562

TO-220

1:BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS _{( Operating temperature range applies unless otherwise specified )}

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

-60

-50

-5

Collector current

Total Power Dissipation(Ta=25°C)

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS_{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector cut-off current

Emitter cut-off current

Collector to emitter breakdown

voltage

SYMBOL

I_CBO

TEST CONDITIONS

VCB=-50V, I_E=0

VEB=-5V, I_C=0

MIN TYP MAX UNIT

-1.0

µA

I_EBO

V(BR)CEO

Ic=-10mA, IB=0

-50

DC Current Gain

h_FE1

h_FE2

VCE(sat)

VCE=-1V, IC=-1A

VCE=-1V, IC=-3A

Ic=-3A, IB=-0.15A

240

-0.4

-1.2

Collector to emitter saturation

voltage

Base to emitter saturation voltage

Transition frequency

-0.2

VBE(sat)

Ic=-3A, IB=-0.15A

VCE=-4V, Ic=-1A

-0.9

MHz

µs

Collector output capacitance

Cob

ton

tstg

VCB=-10V, IE=0, f=1MHz

170

0.1

1.0

0.1

Switching time

Turn-on time

Storage time

Fall time

µs

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R203-015,B

12 3

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