Datasheet > 2N80L-TM3-R

2N80L-TM3-R

更新时间： 2022-05-13 10:00:51

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	235K
描述
2A, 800V N-CHANNEL POWER MOSFET

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数据手册

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2N80L-TM3-R 数据手册

2N80

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

800

±30

2.4

UNIT

Drain-Source Voltage

Gate-Source Voltage

Avalanche Current (Note 1)

Continuous

I_D

2.4

Drain Current

Pulsed (Note 1)

I_DM

9.6

Single Pulsed (Note 2)

Repetitive (Note 1)

E_AS

180

8.5

V/ns

Avalanche Energy

E_AR

Peak Diode Recovery dv/dt (Note 3)

TO-220F

dv/dt

4.0

Power Dissipation

TO-251

TO-252

P_D

Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55~+150

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 59mH, I_AS= 2.4A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

3. I_SD≤ 2.4A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C

4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

°C/W

TO-220F

TO-251

TO-252

TO-220F

TO-251

TO-252

Junction to Ambient

Junction to Case

θ_JA

110

5.2

θ_JC

°C/W

2.85

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

BV_DSS

△BV_DSS/△T_J

I_D=250µA, V_GS=0V

800

Reference to 25°C, I_D=250µA

_DS=800V, V_GS=0V

V_DS=640V, T_C=125°C

_GS=+30V, V_DS=0V

0.9

V/°C

Drain-Source Leakage Current

I_DSS

I_GSS

µA

100

Forward

Gate- Source Leakage Current

Reverse

+100 nA

-100 nA

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

g_FS

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=1.2A

V_DS=50V, I_D=1.2A

3.0

5.0

6.3

Ω

Static Drain-Source On-State Resistance

Forward Transconductance (Note 1)

DYNAMIC PARAMETERS

Input Capacitance

4.8

2.65

C_ISS

C_OSS

C_RSS

425 550 pF

Output Capacitance

V_GS=0V, V_DS=25V, f=1.0MHz

Reverse Transfer Capacitance

5.5

7.0 pF

UNISONIC TECHNOLOGIES CO., LTD

2 of 6

QW-R502-480.C

www.unisonic.com.tw

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