Datasheet > 2N7002KA_1

2N7002KA_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	87K
描述
N-channel TrenchMOS FET

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2N7002KA_1 数据手册

2N7002KA

NXP Semiconductors

N-channel TrenchMOS FET

6. Characteristics

Table 5.

Characteristics

T_j= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Static characteristics

V_(BR)DSSdrain-source breakdown

voltage

I_D= 10 µA; V_GS= 0 V

T_j= 25 °C

T_j= −55 °C

V_(BR)GSSgate-source breakdown

voltage

I_G= ±1 mA; V_DS= 0 V

V_GS(th)

gate-source threshold voltage I_D= 1 mA; V_DS= V_GS; see Figure 9 and 10

T_j= 25 °C

T_j= 150 °C

T_j= −55 °C

0.6

3.5

I_DSS

drain leakage current

gate leakage current

V_DS= 48 V; V_GS= 0 V

T_j= 25 °C

0.01

µA

T_j= 150 °C

500

I_GSS

V_GS= ±10 V; V_DS= 0 V

V_GS= 10 V; I_D= 500 mA; see Figure 6 and 8

T_j= 25 °C

R_DSon

drain-source on-state

resistance

2.8

4.4

Ω

T_j= 150 °C

8.14

5.3

V_GS= 4.5 V; I_D= 75 mA; see Figure 6 and 8

3.8

Dynamic characteristics

C_iss

C_oss

C_rss

t_on

input capacitance

output capacitance

reverse transfer capacitance

turn-on time

V_GS= 0 V; V_DS= 10 V; f = 1 MHz;

see Figure 12

V_DS= 50 V; R_L= 250 Ω; V_GS= 10 V;

R_G= 50 Ω; R_GS= 50 Ω

t_off

turn-off time

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 300 mA; V_GS= 0 V; see Figure 11

0.85 1.5

reverse recovery time

recovered charge

I_S= 300 mA; dI_S/dt = −100 A/µs; V_GS= 0 V;

V_DS= 25 V

Q_r

2N7002KA_2

Product data sheet

Rev. 02 — 25 September 2007

5 of 11

1 2 3 456 7 8...11

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