Datasheet > 2N7002K-AU_15

2N7002K-AU_15

更新时间： 2022-02-26 14:22:09

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	234K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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数据手册

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2N7002K-AU_15 数据手册

2N7002K

Vgs

V_DS=10V

I_D=250mA

Qsw

Vgs(th)

Qg(th)

Qgs

0.2

0.4

0.6

0.8

Qgd

Q_g- Gate Charge (nC)

Fig.7 - Gate Charge

Fig.6 - Gate Charge Waveform

1.2

I_D=250mA

ID = 250mA

1.1

0.9

0.8

0.7

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J- Junction Temperature ( ^oC)

T_J- Junction Temperature ( C)

Fig.8 - Threshold Voltage vs Temperature

Fig.9 - Breakdown Voltage vs Junction Temperature

f = 1MHz

V_GS= 0V

T_J= 125 C

-55^oC

Ciss

0.1

Coss

25^oC

Crss

0.01

0.2

0.4

0.6

0.8

1.2

1.4

1.6

- Drain-to-Source Voltage (V)

V_SD- Source-to-Drain Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage

Fig.11 - Capacitance vs Drain to Source Voltage

May 13,2015-REV.03

PAGE . 4

1 2 345 6 7

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