Datasheet > 2N6488BV

2N6488BV

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	367K
描述
15A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N6488BV 数据手册

*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

Vdc

CEO(sus)

(I = 200 mAdc, I = 0)

2N6487, 2N6490

2N6488, 2N6491

—

Collector–Emitter Sustaining Voltage (1)

(I = 200 mAdc, V = 1.5 Vdc)

VCEX

Vdc

mAdc

µAdc

2N6487, 2N6490

2N6488, 2N6491

—

Collector Cutoff Current

CEO

= 30 Vdc, I = 0)

2N6487, 2N6490

2N6488, 2N6491

—

1.0

= 40 Vdc, I = 0)

Collector Cutoff Current

CEX

= 65 Vdc, V

= 85 Vdc, V

= 60 Vdc, V

= 80 Vdc, V

= 1.5 Vdc)

= 1.5 Vdc, T = 150 C)

2N6487, 2N6490

2N6488, 2N6491

2N6487, 2N6490

2N6488, 2N6491

—

500

5.0

EB(off)

= 1.5 Vdc, T = 150 C)

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

—

1.0

mAdc

EBO

ON CHARACTERISTICS

DC Current Gain

—

(I = 5.0 Adc, V

= 4.0 Vdc)

5.0

150

—

(I = 15 Adc, V

Collector–Emitter Saturation Voltage

(I = 5.0 Adc, I = 0.5 Adc)

Vdc

CE(sat)

—

1.3

3.5

(I = 15 Adc, I = 5.0 Adc)

Base–Emitter On Voltage

BE(on)

(I = 5.0 Adc, V

(I = 15 Adc, V

= 4.0 Vdc)

—

1.3

3.5

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (2)

5.0

—

MHz

—

(I = 1.0 Adc, V

C CE

= 4.0 Vdc, f = 1.0 MHz)

test

Small–Signal Current Gain

(I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 kHz)

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle

2.0%.

(2) f = |h | • f

test

+ 30 V

1000

500

25 µs

+ 10 V

SCOPE

200

100

– 10 V

t , t

r f

10 ns

t @ V

d BE(off)

5.0 V

NPN

PNP

DUTY CYCLE = 1.0%

– 4 V

R AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS.

FOR PNP, REVERSE ALL POLARITIES.

= 25°C

= 30 V

I /I = 10

C B

D MUST BE FAST RECOVERY TYPE, e.g.:

0.2

0.5

1.0

2.0

5.0

1N5825 USED ABOVE I

100 mA

MSD6100 USED BELOW I

I , COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Turn–On Time

3–133

Motorola Bipolar Power Transistor Device Data

123 4 5 6 7...61

下载PDF

与2N6488BV相关器件

型号	品牌	描述	获取价格	数据表
2N6488C	MOTOROLA	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
2N6488D1	MOTOROLA	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
2N6488-DR6260	RENESAS	15A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB	获取价格
2N6488-DR6274	RENESAS	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
2N6488-DR6280	RENESAS	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
2N6488DW	ONSEMI	15A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN	获取价格