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2N6489 PDF预览

2N6489

更新时间: 2024-11-29 06:16:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 121K
描述
Silicon PNP Power Transistors

2N6489 数据手册

 浏览型号2N6489的Datasheet PDF文件第2页浏览型号2N6489的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N6489 2N6490 2N6491  
DESCRIPTION  
·With TO-220 package  
·Excellent safe operating area  
·Complement to type 2N6486 2N6487  
2N6488 respectively  
APPLICATIONS  
·Power amplifier and medium speed  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-50  
UNIT  
2N6489  
2N6490  
2N6491  
2N6489  
2N6490  
2N6491  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
-70  
-90  
-40  
VCEO  
Collector-emitter voltage  
V
-60  
-80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
-5  
V
A
-15  
IB  
Base current  
-5  
A
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
75  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
1.67  
/W  

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2N6489-6200 RENESAS

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Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
2N6489-DR6280 RENESAS

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15A, 40V, PNP, Si, POWER TRANSISTOR, TO-220AB