Datasheet > 2N6394_06

2N6394_06

更新时间： 2024-02-19 14:20:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	63K
描述
Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS

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2N6394_06 数据手册

2N6394 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies.

Features

http://onsemi.com

• Glass Passivated Junctions with Center Gate Geometry for Greater

Parameter Uniformity and Stability

SCRs

12 AMPERES RMS

50 thru 800 VOLTS

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 V

• Pb−Free Packages are Available*

†

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to 125°C, Sine Wave,

MARKING

DIAGRAM

50 to 60 Hz, Gate Open)

2N6394

2N6395

2N6397

2N6399

100

400

800

On-State RMS Current

(180° Conduction Angles; T = 90°C)

T(RMS)

TO−220AB

CASE 221A

STYLE 3

Peak Non-Repetitive Surge Current

100

2N639xG

AYWW

TSM

(1/2 Cycle, Sine Wave, 60 Hz, T = 90°C)

Circuit Fusing (t = 8.3 ms)

I t

A s

Forward Peak Gate Power

(Pulse Width ≤ 1.0 ms, T = 90°C)

Forward Average Gate Power

0.5

2.0

G(AV)

2N639x = Device Code

x = 4, 5, 7, or 9

(t = 8.3 ms, T = 90°C)

Forward Peak Gate Current

= Pb−Free Package

= Assembly Location

= Year

(Pulse Width ≤ 1.0 ms, T = 90°C)

Operating Junction Temperature Range

−40 to +125

−40 to +150

°C

= Work Week

Storage Temperature Range

†

stg

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

PIN ASSIGNMENT

Cathode

Rating

Symbol

Max

2.0

Unit

°C/W

°C

Thermal Resistance, Junction−to−Case

Anode

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 10 Seconds

260

Gate

Anode

†Indicates JEDEC Registered Data

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

1. V

and V

for all types can be applied on a continuous basis. Ratings

dimensions section on page 4 of this data sheet.

DRM

RRM

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

August, 2006 − Rev. 6

2N6394/D

12 3 4 5

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与2N6394_06相关器件

型号	品牌	获取价格	描述	数据表
2N6394-16	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220, 2 PI
2N6394-A	MOTOROLA	获取价格	12A, 50V, SCR, TO-220AB
2N6394-A16A	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220, 3 PI
2N6394-AD	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB
2N6394-AJ	MOTOROLA	获取价格	12A, 50V, SCR, TO-220AB
2N6394-AK	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB
2N6394-AN	MOTOROLA	获取价格	12A, 50V, SCR, TO-220AB
2N6394-AU	MOTOROLA	获取价格	12A, 50V, SCR, TO-220AB
2N6394-BA	MOTOROLA	获取价格	12A, 50V, SCR, TO-220AB
2N6394-BC	MOTOROLA	获取价格	12A, 50V, SCR, TO-220AB

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