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2N6394TG PDF预览

2N6394TG

更新时间: 2024-09-24 13:04:03
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器
页数 文件大小 规格书
8页 79K
描述
Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 50-TUBE

2N6394TG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:CASE 221A-07, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80Factory Lead Time:1 week
风险等级:5.63外壳连接:ANODE
标称电路换相断开时间:35 µs配置:SINGLE
最大直流栅极触发电流:30 mA最大直流栅极触发电压:1.5 V
最大维持电流:50 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大漏电流:2 mA通态非重复峰值电流:100 A
元件数量:1端子数量:3
最大通态电流:12000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:12 A断态重复峰值电压:50 V
重复峰值反向电压:50 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:SCR
Base Number Matches:1

2N6394TG 数据手册

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2N6394 Series  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supplies.  
Glass Passivated Junctions with Center Gate Geometry for Greater  
Parameter Uniformity and Stability  
http://onsemi.com  
Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Blocking Voltage to 800 Volts  
SCRs  
12 AMPERES RMS  
50 thru 800 VOLTS  
Device Marking: Logo, Device Type, e.g., 2N6394, Date Code  
G
*MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
A
K
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off–State Voltage (Note 1.)  
V
DRM,  
Volts  
(T = –40 to 125°C, Sine Wave,  
50 to 60 Hz, Gate Open)  
V
RRM  
J
MARKING  
2N6394  
50  
DIAGRAM  
2N6395  
2N6397  
2N6399  
100  
400  
800  
4
On-State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
12  
A
A
T(RMS)  
TO–220AB  
CASE 221A  
STYLE 3  
YY WW  
639x  
C
Peak Non-Repetitive Surge Current  
I
100  
TSM  
(1/2 Cycle, Sine Wave, 60 Hz, T = 90°C)  
J
1
2
2
Circuit Fusing (t = 8.3 ms)  
Forward Peak Gate Power  
I t  
40  
20  
A s  
2
x
= 4, 5, 7 or 9  
3
YY = Year  
P
Watts  
Watts  
A
GM  
WW = Work Week  
(Pulse Width 1.0 µs, T = 90°C)  
C
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
PIN ASSIGNMENT  
Cathode  
(t = 8.3 ms, T = 90°C)  
C
1
2
3
4
Forward Peak Gate Current  
I
GM  
Anode  
(Pulse Width 1.0 µs, T = 90°C)  
C
Gate  
Operating Junction Temperature Range  
T
J
–40 to  
+125  
°C  
Anode  
Storage Temperature Range  
T
stg  
–40 to  
+150  
°C  
ORDERING INFORMATION  
*Indicates JEDEC Registered Data  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
Device  
Package  
TO220AB  
TO220AB  
TO220AB  
TO220AB  
Shipping  
500/Box  
500/Box  
500/Box  
500/Box  
DRM  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
2N6394  
2N6395  
2N6397  
2N6399  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
April, 2001 – Rev. 3  
2N6394/D  

2N6394TG 替代型号

型号 品牌 替代类型 描述 数据表
2N6394G ONSEMI

完全替代

Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS

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