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2N6107AF PDF预览

2N6107AF

更新时间: 2023-04-15 00:00:00
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
60页 371K
描述
7A, 70V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6107AF 数据手册

 浏览型号2N6107AF的Datasheet PDF文件第1页浏览型号2N6107AF的Datasheet PDF文件第2页浏览型号2N6107AF的Datasheet PDF文件第4页浏览型号2N6107AF的Datasheet PDF文件第5页浏览型号2N6107AF的Datasheet PDF文件第6页浏览型号2N6107AF的Datasheet PDF文件第7页 
1.0  
0.7  
0.5  
D = 0.5  
0.2  
0.3  
0.2  
0.1  
0.1  
0.07  
0.05  
P
(pk)  
Z
= r(t) R  
θJC  
θJC(t)  
= 3.125°C/W MAX  
0.05  
R
θJC  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
0.02  
t
1
0.03  
0.02  
READ TIME AT t  
T
J(pk)  
t
1
2
0.01  
SINGLE PULSE  
0.05  
– T = P  
C
Z
(t)  
(pk) θJC  
DUTY CYCLE, D = t /t  
1 2  
0.01  
0.01  
0.02  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1.0 k  
t, TIME (ms)  
Figure 4. Thermal Response  
15  
10  
0.1 ms  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
0.5 ms  
7.0  
5.0  
down. Safe operating area curves indicate I – V  
limits of  
C
CE  
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
dc  
3.0  
2.0  
0.1  
ms  
The data of Figure 5 is based on T  
J(pk)  
= 150 C; T is  
C
CURRENT LIMIT  
SECONDARY  
BREAKDOWN LIMIT  
THERMAL LIMIT  
1.0  
0.7  
0.5  
variable depending on conditions. Second breakdown pulse  
limits are valid for duty cycles to 10% provided T  
J(pk)  
may be calculated from the data in Fig-  
5.0 ms  
150 C. T  
J(pk)  
ure 4. At high case temperatures, thermal limitations will re-  
duce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
0.3  
0.2  
0.15  
@ T = 25°C (SINGLE PULSE)  
C
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 5. Active–Region Safe Operating Area  
5.0  
300  
3.0  
2.0  
T = 25°C  
J
200  
T = 25°C  
J
V
= 30 V  
CC  
I /I = 10  
C B  
= I  
t
s
I
1.0  
0.7  
0.5  
B1 B2  
C
ib  
100  
70  
t
0.3  
0.2  
r
C
ob  
50  
0.1  
0.07  
0.05  
30  
0.07 0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0 7.0  
0.5  
1.0  
2.0 3.0  
5.0  
10  
20 30  
50  
I , COLLECTOR CURRENT (AMP)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Turn–Off Time  
Figure 7. Capacitance  
3–103  
Motorola Bipolar Power Transistor Device Data  

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