2N60K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
±30
2.0
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
A
Continuous
ID
2.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
8.0
A
EAS
85
mJ
mJ
V/ns
W
Avalanche Energy
EAR
4.5
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
SOT-223
TO-220
1
54
W
TO-220F/TO-220F1
TO-220F3
21
23
W
W
Power Dissipation
PD
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252-4
TO-252D
44
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°С
°С
°С
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=42.5mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SOT-223
SYMBOL
RATINGS
150
UNIT
°C/W
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
62.5
°C/W
Junction to Ambient
θJA
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252-4
TO-252D
100
°C/W
SOT-223
14
°C/W
°C/W
TO-220
2.32
TO-220F/TO-220F1
TO-220F3
5.95
5.43
°C/W
°C/W
Junction to Case
θJC
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252-4
TO-252D
2.87
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B03.F
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